Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET
US6339005B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1999 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Oct 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/647
Abstract
A silicon on insulator transistor is disclosed which has a Schottky contact to the body. The Schottky contact may be formed on the source and/or drain side of the gate conductor. A spacer, with at least a part thereof being disposable, is formed on the sidewalls of the gate conductor. Extension regions are provided in the substrate which extend under the spacer and the gate conductor. Source and drain diffusion regions are implanted into the substrate adjacent to the extension regions. The disposable part of the spacer is then removed to expose a portion of the extension region. A metal layer is formed at least in the extension regions, resulting in the Schottky contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.