Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
US6339016B1 · kind B1 · utility
10Cited by
90References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method are provided for forming a denuded zone and an epitaxial layer on a semiconductor wafer used in manufacturing electronic components. The denuded zone and epitaxial layer are formed in one chamber. The apparatus includes a plurality of upstanding pins immovably mounted on a susceptor and maintain a semiconductor wafer spaced from the susceptor during both application of the epitaxial layer and formation of the denuded zone. Fast cooling of the wafer is accomplished by having the wafer out of conductive heat transfer relation with the susceptor during cooling thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.