Metal clad ridge waveguide (“MCRW”) laser semiconductor structure with doped semiconductor substrate

US6339233B1 · kind B1 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Alfred Lell · Maxhütte-Haidhof, DE

Key dates

• Filing date: Sep 30, 1997
• Grant date: Jan 15, 2002
• Expiry date: Sep 30, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/305
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor device comprises an electrically conductive III-V semiconductor substrate which has mutually opposite first and second main surfaces. At least one pn junction, reverse biased during operation of the semiconductor device, is disposed above the first main surface. At least one functional semiconductor structure is disposed above the at least one pn junction. The functional semiconductor structure is electrically insulated from the second main surface of the III-V semiconductor substrate.