Method of manufacturing a semiconductor device, method of manufacturing a photomask, and a master mask
US6340542B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1999 |
| Grant date | Jan 22, 2002 |
| Priority date | — |
| Expiry date | Dec 6, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device, light is applied through the cell patterns made in master masks, thereby transferring the cell patterns to, and forming the cell patterns on, a wafer. On the basis of layout data representing a layout diagram of the semiconductor device, the pattern data of the device is divided along the boundaries of the function blocks of the device, generating pattern data items. Master masks are prepared in accordance with the pattern data items. Light is applied to the wafer, first through the master mask and then through the master mask. The cell patterns made in the master masks are transferred to the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.