Method for reworking copper metallurgy in semiconductor devices

US6340601B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Thomas F. Curran · Wauconda, US
• Timothy C. Krywanczyk · South Burlington, US
• Michael S. Lube · South Burlington, US
• Matthew D. Moon · Jeffersonville, US
• Rock Nadeau · Jericho, US
• Clark D. Reynolds · Colchester, US
• Dean Allen Schaffer · South Burlington, US
• Joel M. Sharrow · South Hero, US
• Paul Smith · Fort Collins, US
• David C. Thomas · Oklahoma City, US
• Eric J. White · Vergennes, US
• Kenneth H. Yao · South Burlington, US

Key dates

• Filing date: Dec 30, 1999
• Grant date: Jan 22, 2002
• Expiry date: Dec 30, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76892
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of reworking copper metallurgy on semiconductor devices which includes selective removal of insulator, selective removal of copper, non-selective removal of copper and insulator followed by the redeposition of an insulating copper barrier layer and at least one metallurgical interconnect layer.