Magnetic tunnel junction elements and their fabrication method
US6341053B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1998 |
| Grant date | Jan 22, 2002 |
| Priority date | — |
| Expiry date | Oct 30, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a magnetic tunnel junction device for an external magnetic field sensor. The device comprises a stack of multi-layers, which include a first antiferromagnetic pinning layer, a ferromagnetic free layer, a tunneling barrier layer, a ferromagnetic pinned layer, and a second antiferromagnetic pinning layer. The first pinning layer has a first pinning field, which pins a magnetization of the free layer in a track width direction. The second pinning layer has a second pinning field, which pins a magnetization of the pinned layer in a direction in the plane of the stacked layers of the magnetic tunnel junction, along the applied external magnetic field direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.