Chemical mechanical polishing apparatus
US6341995B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2000 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Mar 10, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present invention relates to improved chemical mechanical polishing apparatus, which reduce air sharp pressure on the polish head for preventing the breakage unpolished wafer. The improved chemical mechanical polishing apparatus of present invention is composed of a wafer head, a polish head, a damper and a sensor. The flowing speed of gas is reduced by making the diameter of the gas line connected to the damper air inlet smaller than the diameter of the gas line connected to the damper air outlet. The initial air sharp pressure is reduced and make &Dgr;P=Pwafer−Ppolish<0, by adding an air temporary storage machine in between the inlet and the outlet. Besides, putting a sensor on the air lines under the air temporary storage machine, when slurry flows in the air line owing to the breaking of slurry diaphragm, the sensor will send a signal to a control system of the improved apparatus of chemical mechanical polishing, and make the related parts stop operating automatically to avoid breaking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.