Composite member its separation method and preparation method of semiconductor substrate by utilization thereof
US6342433B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 1999 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Feb 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to separate first and second base substrate without cracking them, and use a damaged base substrate again as a semiconductor substrate to enhance a yield, there is disclosed a preparation method of a semiconductor substrate comprising the steps of separating a composite member formed by bonding the first and second base substrates to each other via an insulating layer into a plurality of members at a separation area formed in a position different from a bonded face to transfer a part of one base substrate onto the other base. A mechanical strength of the separation area is non-uniform along the bonded face in the composite member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.