Semiconductor storage device with ferrielectric capacitor and metal-oxide isolation
US6342712B1 · kind B1 · utility
27Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Aug 13, 1999 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Aug 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/688
Abstract
The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.