Yasuhiro Shimamoto
49Patents
9h-index
45Co-inventors
75Inventor score
Filing activity: Aug 13, 1999 → Mar 26, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6342712B1 | Semiconductor storage device with ferrielectric capacitor and metal-oxide isolation | Electricity | 27 | Expired |
| US6743739B2 | Fabrication method for semiconductor integrated devices | Electricity | 27 | Expired |
| US8125012B2 | Non-volatile memory device with a silicon nitride charge holding film having an excess of silicon | Emerging Cross-Sectional Technologies | 20 | Active |
| US6380574B1 | Ferroelectric capacitor with a self-aligned diffusion barrier | Electricity | 15 | Expired |
| US7872298B2 | Split-gate type memory device | Physics | 14 | Active |
| US7915666B2 | Nonvolatile semiconductor memory devices with charge injection corner | Electricity | 14 | Active |
| US6503791B2 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Electricity | 11 | Expired |
| US6992022B2 | Fabrication method for semiconductor integrated devices | Electricity | 10 | Expired |
| US6787451B2 | Semiconductor device and manufacturing method thereof | Electricity | 10 | Expired |
| US6555429B2 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Electricity | 9 | Expired |
| US7935597B2 | Semiconductor device and manufacturing method of the same | Physics | 7 | Active |
| US6483143B2 | Semiconductor device having a capacitor structure including a self-alignment deposition preventing film | Electricity | 7 | Expired |
| US6635913B2 | Semiconductor storage device | Electricity | 7 | Expired |
| US6462368B2 | Ferroelectric capacitor with a self-aligned diffusion barrier | Electricity | 7 | Expired |
| US7915686B2 | Semiconductor device and manufacturing of the same | Electricity | 6 | Expired |
| US8390053B2 | Nonvolatile semiconductor device including a field effect transistor having a charge storage layer of predetermined length | Electricity | 5 | Active |
| US7709315B2 | Semiconductor device and method of manufacturing the same | Electricity | 5 | Active |
| US8319274B2 | Semiconductor device | Electricity | 5 | Active |
| US8410543B2 | Semiconductor storage device and manufacturing method thereof | Electricity | 5 | Active |
| US9214516B2 | Field effect silicon carbide transistor | Electricity | 5 | Active |
| US6740901B2 | Production of semiconductor integrated circuit | Electricity | 4 | Expired |
| US9029979B2 | 4h-SiC semiconductor element and semiconductor device | Electricity | 3 | Active |
| US7259058B2 | Fabricating method of semiconductor integrated circuits | Electricity | 3 | Expired |
| US6521494B2 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Electricity | 3 | Expired |
| US6509246B2 | Production of semiconductor integrated circuit | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.