Aluminum metallization method and product
US6344281B1 · kind B1 · utility
5Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1999 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Oct 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
IC fabrication employs the deposition of aluminum as a metallization layer. Frequently, the aluminum is doped with copper in small amounts to improve electric properties. Low temperature deposition of these layers is preferred to ensure the proper microstructure and surface roughness. Low temperature deposition (below about 300° C.) results in the formation of copper precipitates which can be difficult to remove. Annealing the layer formed, either prior to, or after formation of capping layers and additional layers thereon, drives the copper precipitate back into solution, permitting small dimension fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.