Method of making ferroelectric film with protective cover film against hydrogen and moisture
US6344363B1 · kind B1 · utility
1Cited by
10References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1998 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Aug 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric film is formed on a principal surface of an underlying substrate. By the vapor deposition using high density plasma, an insulating protection film is deposited so that the ferroelectric film is covered therewith. The deposited protection film can prevent the ferroelectric film from deteriorating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.