Method of separation films from bulk substrates by plasma immersion ion implantation
US6344404B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1999 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Nov 1, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation (“PIII”) system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a surface of the substrate to a first desired depth to provide a first distribution of the ions using a plasma immersion ion implantation system 10. The implanted ions define a first thickness of material 2101 above the implant. Global energy is then increased of the substrate to initiate a cleaving action, where the cleaving action is sufficient to completely free the thickness of material from a remaining portion of the substrate. By way of the PIII system, the ions are introduced into the substrate in an efficient and cost effective manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.