Electrode structure of compound semiconductor device
US6344665B1 · kind B1 · utility
38Cited by
8References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2000 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Aug 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
An electrode structure of compound semiconductor device. The compound semiconductor device has a substrate, an n-type layer over entire substrate, a mesa-like p-type layer on partial surface of the n-type layer, a transparent conductive layer on the mesa-like p-type layer; a p-contact formed on the transparent conductive layer and an n-contact formed on the exposed n-type layer. The n-contact comprises an enclosure portion compassing the p-contact, whereby the current flowed from the p-contact to the n-contact is uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.