Multilayered quantum conducting barrier structures

US6344673B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Caroline Aussilhou · Le Coudray-Montceaux, FR
• Corinne Buchet · Corbeil-Essonnes, FR
• Patrick Raffin · Joinville-le-Pont, FR
• Francis Rodier · Mondeville, FR
• Jean-Marc Rousseau · Ramonville-Saint-Agne, FR

Key dates

• Filing date: Jun 30, 2000
• Grant date: Feb 5, 2002
• Expiry date: Jun 30, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/70

Abstract

A multilayered quantum conducting barrier (MQCB) structure formed on two semiconductor regions having a different crystalline nature and a thin layer of an insulating material sandwiched between said semiconductor regions. An undoped amorphous silicon layer continuously coats these two semiconductor regions and insulating layer. The surface of the undoped amorphous silicon layer is nitridized to produce a superficial film of a nitride based material to form the desired quantum conducting barrier (QCB). A stack consisting of at least one dual layer comprised of a bottom undoped amorphous silicon layer and a top dopant monolayer is formed on said undoped amorphous silicon layer. After thermal processing, the MQCB structure operates as a strap allowing an electrical continuity between these semiconductor regions through the QCB by a quantum mechanical effect.