Semiconductor device
US6344775B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2000 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Mar 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/19
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided having a high-frequency amplifying bipolar transistor (10) with its emitter electrode grounded. A current mirror circuit including a bipolar transistor (20) supplies the transistor (10) with a base potential as bias voltages for operating as a Class B or Class AB amplifier. A thermal linkage is established between the transistor (10) and the transistor (20) to reduce a difference between their junction temperatures. A metallic layer (4) is provided as a means for establishing the thermal linkage. The transistor (20) is provided between fingers (1A) and (1B) of the transistor (10) as another means for establishing the thermal linkage. A distance between the transistor (20) and one of the fingers (1A) and (1B) of the transistor (10) is made smaller than the thickness of a semiconductor substrate (7) on which the transistors are formed as other means for establishing the thermal linkage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.