Magneto-resistive tunnel junction head with specific flux guide structure
US6344954B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2000 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a magneto-resistive tunnel junction head having a tunnel multilayered film composed of a tunnel barrier layer, and a ferromagnetic free layer and a ferromagnetic pinned layer formed to sandwich the tunnel barrier layer therebetween, wherein the ferromagnetic free layer comprises, in an integral fashion, a free layer main portion substantially constituting a part of the tunnel multilayered film, a front flux guide portion extending on a front side of the free layer main portion, and a back flux guide portion extending on a back side thereof, wherein the front flux guide portion constitutes a part of an ABS (Air Bearing Surface), and wherein a width-direction length Lm of the free layer main portion is set greater than a width-direction length Lf of the front flux guide portion and a width-direction length Lb of the back flux guide portion. Thus, there can be provided a magneto-resistive tunnel junction head with improved head performance, in particular, which is excellent in corrosion resistance and can achieve a high and stable head output for adaptation to the ultrahigh density recording using an improved longitudinal bias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.