Olivier Redon
15Patents
11h-index
13Co-inventors
65Inventor score
Filing activity: Mar 2, 2000 → May 20, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6532164B2 | Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device | Electricity | 243 | Expired |
| US6603677B2 | Three-layered stacked magnetic spin polarization device with memory | Emerging Cross-Sectional Technologies | 228 | Expired |
| US6950335B2 | Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device | Electricity | 96 | Expired |
| US6381107B1 | Magneto-resistive tunnel junction head having a shield lead rear flux guide | Physics | 70 | Expired |
| US6344954B1 | Magneto-resistive tunnel junction head with specific flux guide structure | Physics | 37 | Expired |
| US7411817B2 | Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same | Physics | 36 | Active |
| US6469879B1 | Magneto-resistive tunnel junction head with biasing elements abutting free layer extended portions | Physics | 36 | Expired |
| US6519124B1 | Magnetic tunnel junction read head using a hybrid, low-magnetization flux guide | Physics | 33 | Expired |
| US7796428B2 | Thermally assisted magnetic write memory | Physics | 20 | Active |
| US8847589B2 | Magnetic field sensor with suspended stress gauge | Emerging Cross-Sectional Technologies | 13 | Active |
| US8669122B2 | Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained | Physics | 12 | Active |
| US7957181B2 | Magnetic tunnel junction magnetic memory | Emerging Cross-Sectional Technologies | 6 | Active |
| US8048686B2 | Production of a device comprising magnetic structures formed on one and the same substrate and having respective different magnetization orientations | Emerging Cross-Sectional Technologies | 0 | Active |
| US7626221B2 | Magnetoresistive random access memory with high current density | Physics | 0 | Expired |
| USRE42619E1 | Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device | General | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.