Capacitor having sidewall spacer protecting the dielectric layer
US6344964B1 · kind B1 · utility
34Cited by
24References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 14, 2000 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Jul 14, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49146
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor structure includes a bottom plate, a top plate, and a dielectric layer between the bottom and top plates. In addition, at least one insulating sidewall spacer that protects the dielectric layer during processing is formed along the perimeter of the top plate and overlaying a portion of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.