High density plasma enhanced chemical vapor deposition method
US6346302B2 · kind B2 · utility
26Cited by
11References
7Claims
0Family size
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Key dates
| Filing date | Nov 20, 1998 |
| Grant date | Feb 12, 2002 |
| Priority date | — |
| Expiry date | Nov 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high density plasma enhanced chemical vapor deposition method for depositing an insulating film such as a silicon oxide film on a silicon substrate includes at least both a first deposition period during which a first power having a first frequency is applied to the silicon substrate and a second deposition period during which a second power having a second frequency which is lower than the first frequency is applied to the silicon substrate to keep an underlying Si/SiO2 interface free from an interface state, where said underlying Si/SiO2 interface has already been formed under said insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.