Process for lift off and transfer of semiconductor devices onto an alien substrate
US6346459B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2000 |
| Grant date | Feb 12, 2002 |
| Priority date | — |
| Expiry date | Feb 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of the invention causes fracture of a semiconductor layer containing semiconductor devices from a support layer and requires no masking of the semiconductor device features during an implantation action. The method initially implants protons throughout an entirety of the semiconductor layer at an energy level that enables the protons to reach a depth that defines a delamination region. The implanting creating defects in the semiconductor devices and charge accumulation in dielectric portions (if any). Next a heat treating step causes a delamination of the semiconductor layer from the support layer that lies beneath the delamination region. Then the semiconductor layer is annealed at a temperature that exceeds a thermal stability temperature of the defects to cause a healing thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.