Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices
US6346821B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 11, 1999 |
| Grant date | Feb 12, 2002 |
| Priority date | — |
| Expiry date | Mar 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is provided for nondestructive measurement of minority carrier diffusion (Lp) length and accordingly minority carrier lifetime (Óp) in a semiconductor device. The method includes the steps of: reverse biasing a semiconductor device under test, scanning a focused beam of radiant energy along a length of the semiconductor device, detecting current induced in the DUT by the beam as it passes point-by-point along a length of the DUT, detecting current induced in the semiconductor device by the beam as it passes point-by-point along the scanned length of the semiconductor device to generate a signal waveform (Isignal), and determining from the Isignal waveform minority carrier diffusion length (Lp) and/or minority carrier lifetime (Óp) in the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.