Slurry for mechanical polishing (CMP) of metals and use thereof
US6348076B1 · kind B1 · utility
61Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1999 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Dec 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Slurry compositions comprising an oxidizing agent, copper corrosion inhibitor, abrasive particles; surface active agent and polyelectrolyte are useful for polishing or planarizing chip interconnect/wiring material such as Al, W and especially Cu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.