RIE etch resistant nonchemically amplified resist composition and use thereof
US6348299B1 · kind B1 · utility
9Cited by
17References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1999 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Jul 12, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0042
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photoresist compositions of improved reactive ion etching comprising polymers of 2-hydroxyalkyl methacrylate and/or 2-hydroxyalkylacrylate and a titanate, zirconate and/or hafnate are provided. The photoresist compositions are used for forming positive lithographic patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.