CMOS image sensor having enhanced photosensitivity and method for fabricating the same
US6348361B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1999 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Dec 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
There is provided a method for fabricating a CMOS image sensor having enhanced reliability and light sensitivity, which comprises the steps of providing a substrate including photosensitive elements and metal wire; forming a first protecting film for protecting the elements over the substrate, covering the metal wire; forming a flattened spin-on-glass film on the first protecting film; forming a second protecting film for protecting the elements on the spin-on-glass film; forming color filter patterns on the second protecting film; forming a photoresist film for flattening on the color filter patterns and the second protecting film; and forming microlenses on the photoresist film. By using the flattened SOG film and a photoresist for flattening and pad opening, the present invention can accomplish the thickness uniformity of the color filter corresponding to each unit pixel, the wire-bonding pad devoid of the residuals of the color filter materials and the figure uniformity of the microlenses. The total thickness of the films between the microlens and the photosensitive element of unit pixel can also be adjusted to focus the incident lights onto the photosensitive element of unit p…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.