Method for manufacturing semiconductor devices
US6348369B1 · kind B1 · utility
37Cited by
22References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1999 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Sep 3, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously without being exposed to the air. Also, a laser-annealing device includes a cleaning chamber, and a laser irradiation chamber, wherein a substrate to be processed is transported between the cleaning chamber and the laser irradiation chamber without being exposed to the air.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.