Method for making a hafnium-based insulating film
US6348386B1 · kind B1 · utility
142Cited by
6References
25Claims
0Family size
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Inventor
Key dates
| Filing date | Apr 16, 2001 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Apr 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hafnium-based dielectric layer, such as hafnium oxide (HfO2), is formed over a semiconductor substrate by flowing a hafnium-containing precursor of hafnium (Hf) and iodine (I) and an oxygen-containing precursor resulting in a high quality dielectric layer over the substrate. In one embodiment, the hafnium-containing precursor is Hafnium tetraiodide (HfI4). The two precursors may be applied simultaneously or alternately. The hafnium tetraiodide may be provided into a reaction chamber via sublimation or direct liquid injection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.