David C. Gilmer
13Patents
7h-index
24Co-inventors
62Inventor score
Filing activity: May 26, 2000 → Jun 4, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6348386B1 | Method for making a hafnium-based insulating film | Electricity | 142 | Expired |
| US7015153B1 | Method for forming a layer using a purging gas in a semiconductor process | Electricity | 48 | Expired |
| US6787421B2 | Method for forming a dual gate oxide device using a metal oxide and resulting device | Emerging Cross-Sectional Technologies | 42 | Expired |
| US6717226B2 | Transistor with layered high-K gate dielectric and method therefor | Electricity | 30 | Expired |
| US6573160B2 | Method of recrystallizing an amorphous region of a semiconductor | Electricity | 19 | Expired |
| US6972224B2 | Method for fabricating dual-metal gate device | Electricity | 9 | Expired |
| US7655550B2 | Method of making metal gate transistors | Electricity | 8 | Active |
| US7432164B2 | Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same | Electricity | 4 | Active |
| US7297588B2 | Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities and a process for forming the same | Electricity | 3 | Expired |
| US8432020B2 | Capacitors, systems, and methods | Electricity | 2 | Active |
| US8178401B2 | Method for fabricating dual-metal gate device | Electricity | 1 | Active |
| US7868389B2 | Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities | Electricity | 1 | Active |
| US7683439B2 | Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.