Copper interconnections with enhanced electromigration resistance and reduced defect sensitivity and method of forming same
US6348731B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1999 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Jan 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance.The method includes double damascene using electroplated copper, where the seed layer is converted to an intermetallic layer. A layer of copper intermetallics with hafnium, lanthanum, zirconium or tin, is provided to improve the electromigration resistance and to reduce defect sensitivity.A method is also provided to form a cap atop copper lines, to improve corrosion resistance, which fully covers the surface.Structure and methods are also described to improve the electromigration and corrosion resistance by incorporating carbon atoms in copper interstitial positions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.