Method of manufacturing for CMOS image sensor
US6350127B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Nov 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A method of forming an image sensor is disclosed. A partially processed semiconductor wafer is provide, containing p-type and/or n-type regions which are bounded by isolation regions and with gate oxide layers grown on the surfaces upon which gate electrode structures are disposed, some of said gate electrode structures will serve as gate electrodes of image sensor transistors. Ions are implanted to form source/drain structures about the said gate electrode structures, with an extended region for source drains bordering photodiode regions. Ions are implanted to form photodiodes, overlapping the extended bordering source drain regions. A blanket transparent insulating layer is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.