Crystal growth and annealing for minimized residual stress
US6350310B1 · kind B1 · utility
6Cited by
6References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Jun 7, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.