Process for fabrication of an all-epitaxial-oxide transistor
US6350622B2 · kind B2 · utility
10Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2001 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Jan 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N99/03
Abstract
A method and structure of forming an integrated circuit chip having a transistor includes forming a conductive oxide layer, forming a Mott transition oxide layer over the conductive oxide layer and forming an insulative oxide layer over the Mott transition oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.