Inventor · Peekskill, NY, US

James Misewich

15Patents
10h-index
18Co-inventors
61Inventor score

Filing activity: Nov 19, 1997 → Mar 17, 2003

Most-cited inventions

PatentTitleAreaCited byStatus
US6744087B2 Non-volatile memory using ferroelectric gate field-effect transistors Electricity 48 Expired
US6365913B1 Dual gate field effect transistor utilizing Mott transition materials Electricity 25 Expired
US6426536B1 Double layer perovskite oxide electrodes Electricity 24 Expired
US7115916B2 System and method for molecular optical emission Emerging Cross-Sectional Technologies 20 Expired
US5984478A Dynamic optical compensation for color sequential projection display Physics 20 Expired
US7183568B2 Piezoelectric array with strain dependant conducting elements and method therefor Physics 16 Expired
US6333543A Field-effect transistor with a buried mott material oxide channel Electricity 16 Expired
US6555393B2 Process for fabricating a field-effect transistor with a buried Mott material oxide channel Electricity 11 Expired
US5920086A Light emitting device Electricity 11 Expired
US6259114A Process for fabrication of an all-epitaxial-oxide transistor Electricity 10 Expired
US6350622B2 Process for fabrication of an all-epitaxial-oxide transistor Electricity 10 Expired
US6562633B2 Assembling arrays of small particles using an atomic force microscope to define ferroelectric domains Emerging Cross-Sectional Technologies 7 Expired
US7002646B2 Tunable thin film optical devices and fabrication methods for tunable thin film optical devices Physics 2 Expired
US6479847B2 Method for complementary oxide transistor fabrication Electricity 1 Expired
US6527856B2 Method for changing surface termination of a perovskite oxide substrate surface Electricity 1 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.