Embedded DRAM on silicon-on-insulator substrate

US6350653B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James W. Adkisson · Jericho, US
• Ramachandra Divakaruni · Ossining, US
• Jeffrey P. Gambino · Gresham, US
• Jack A. Mandelman · Stormville, US

Key dates

• Filing date: Oct 12, 2000
• Grant date: Feb 26, 2002
• Expiry date: Oct 12, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/0387

Abstract

A semiconductor device is presented which is directed to a method of forming embedded DRAM and logic devices, where the DRAM devices are formed in bulk, single crystalline semiconductor regions and logic devices are formed in silicon-on-insulator (“SOI”) regions and where buried, doped glass is used as a mask to form deep trenches for storage in the bulk region. The resulting structure is also disclosed.