CCD image sensor
US6351001B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 1996 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Mar 31, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A charge-coupled device (CCD) image sensor that preserves defect gettering characteristics having a vertical overflow drain (VOD) for blooming protection is provided in a structure that provides low voltage electronic shuttering. This structure reduces the electronic shutter voltage to ease the demands on off-chip support circuitry required to operate the CCD image sensor. The invention provides an improved pixel structure to reduce this voltage. Prior art difficulties are avoided by providing uniform, n-type layers of varying doping levels underneath the entire area of the CCD device. Combined with a lightly doped n-type substrate these layers provide low voltage electronic shutter operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.