Monolithically integrated trench MOSFET and Schottky diode
US6351018B1 · kind B1 · utility
175Cited by
10References
24Claims
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Assignee
Inventor
Key dates
| Filing date | Feb 26, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Feb 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A monolithically integrated Schottky diode together with a high performance trenched gate MOSFET. A MOS enhanced Schottky diode structure is interspersed throughout the trench MOSFET cell array to enhance the performance characteristics of the MOSFET switch. The forward voltage drop is reduced by taking advantage of the low barrier height of the Schottky structure. In a specific embodiment, the width of the trench is adjusted such that depletion in the drift region of the Schottky is influenced and controlled by the adjacent MOS structure to increase the reverse voltage capability of the Schottky diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.