Steven Sapp
59Patents
24h-index
55Co-inventors
91Inventor score
Filing activity: Jun 6, 1989 → Oct 31, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6429481B1 | Field effect transistor and method of its manufacture | Electricity | 366 | Expired |
| US7345342B2 | Power semiconductor devices and methods of manufacture | Emerging Cross-Sectional Technologies | 270 | Expired |
| US6710403B2 | Dual trench power MOSFET | Emerging Cross-Sectional Technologies | 201 | Expired |
| US6351018B1 | Monolithically integrated trench MOSFET and Schottky diode | Electricity | 175 | Expired |
| US8143124B2 | Methods of making power semiconductor devices with thick bottom oxide layer | Emerging Cross-Sectional Technologies | 132 | Active |
| US7576388B1 | Trench-gate LDMOS structures | Electricity | 110 | Expired |
| US6566749B1 | Semiconductor die package with improved thermal and electrical performance | Electricity | 84 | Expired |
| US5879994A | Self-aligned method of fabricating terrace gate DMOS transistor | Emerging Cross-Sectional Technologies | 83 | Expired |
| US7982265B2 | Trenched shield gate power semiconductor devices and methods of manufacture | Emerging Cross-Sectional Technologies | 71 | Active |
| US7504306B2 | Method of forming trench gate field effect transistor with recessed mesas | Electricity | 64 | Active |
| US7393749B2 | Charge balance field effect transistor | Electricity | 62 | Active |
| US7504303B2 | Trench-gate field effect transistors and methods of forming the same | Electricity | 61 | Active |
| US6803626B2 | Vertical charge control semiconductor device | Electricity | 60 | Expired |
| US6424035B1 | Semiconductor bilateral switch | Electricity | 59 | Expired |
| US4908328A | High voltage power IC process | Emerging Cross-Sectional Technologies | 57 | Expired |
| US5602046A | Integrated zener diode protection structures and fabrication methods for DMOS power devices | Emerging Cross-Sectional Technologies | 52 | Expired |
| US5342797A | Method for forming a vertical power MOSFET having doped oxide side wall spacers | Emerging Cross-Sectional Technologies | 48 | Expired |
| US6423623B1 | Low Resistance package for semiconductor devices | Electricity | 41 | Expired |
| US6710406B2 | Field effect transistor and method of its manufacture | Electricity | 39 | Expired |
| US6710418B1 | Schottky rectifier with insulation-filled trenches and method of forming the same | Electricity | 39 | Expired |
| US7033891B2 | Trench gate laterally diffused MOSFET devices and methods for making such devices | Electricity | 35 | Expired |
| US6828195B2 | Method of manufacturing a trench transistor having a heavy body region | Electricity | 32 | Expired |
| US5767550A | Integrated zener diode overvoltage protection structures in power DMOS device applications | Emerging Cross-Sectional Technologies | 31 | Expired |
| US7416948B2 | Trench FET with improved body to gate alignment | Electricity | 24 | Active |
| US7514322B2 | Shielded gate field effect transistor | Electricity | 24 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.