Detection of voids in semiconductor wafer processing
US6351516B1 · kind B1 · utility
18Cited by
10References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Dec 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for testing the deposition and/or the removal of a material within a recess on the surface of a sample. An excitation beam is directed onto a region of the sample in a vicinity of the recess, and an intensity of X-ray fluorescence, emitted from the region in a spectral range in which the material is known to fluoresce, is measured. A quantity of the material that is deposited within the recess is determined responsive to the measured intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.