Process for lift-off of a layer from a substrate
US6352909B1 · kind B1 · utility
99Cited by
7References
18Claims
0Family size
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Inventor
Key dates
| Filing date | May 26, 2000 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | May 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separative interlayer comprises a thin quasi-continuous gaseous layer and said interlayer is obtained by gettering a monatomic hydrogen into a preformed buried defect-rich layer preferably obtained by implantation. The monatomic hydrogen is preferably inserted into the substrate by electrolytic means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.