Method for stripping organic based film
US6352937B1 · kind B1 · utility
6Cited by
5References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 27, 1998 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Apr 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method used for processing an organic low dielectric constant insulating film to a desired shape for enabling facilitated stripping of an organic film formed on top of the organic low dielectric constant insulating film. Specifically, there is provided a method for stripping an organic film formed on a layered unit having at least an organic low dielectric constant insulating film. This method includes generating radicals in a gas mainly composed of fluorine-based gas, and stripping the organic film by the generated radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.