Semiconductor passivation deposition process for interfacial adhesion
US6352940B1 · kind B1 · utility
46Cited by
11References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1998 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Jun 26, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of passivating an integrated circuit (IC) is provided. An insulating layer is formed onto the IC. An adhesion layer is formed onto a surface of the insulating layer by treating the surface of the insulating layer with a gas and gas plasma. A first passivation layer is formed upon the adhesion layer, the first passivation layer and the gas and gas plasma including at least one common chemical element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.