Controllable oxidation technique for high quality ultrathin gate oxide formation
US6352941B1 · kind B1 · utility
2Cited by
10References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1999 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Jul 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an ultra-thin gate oxide (14) for a field effect transistor (10). The gate oxide (14) is formed by combining an oxidizing agent (e.g., N2O, CO2) with an etching agent (e.g., H2) and adjusting the partial pressures to controllably grow a thin (˜12 Angstroms) high quality oxide (14).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.