Silicone polymer insulation film on semiconductor substrate and method for forming the film
US6352945B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1999 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Jun 7, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicone polymer insulation film having a low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&bgr;CxHy (&agr;, &bgr;, x, and y are integers) to the reaction chamber of the plasma CVD apparatus. The silicon-containing hydrocarbon compound has at most two O—CnH2n+1 bonds and at least two hydrocarbon radicals bonded to the silicon. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low relative dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.