Abrasive and method for polishing semiconductor substrate
US6354913B1 · kind B1 · utility
19Cited by
7References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 6, 1999 |
| Grant date | Mar 12, 2002 |
| Priority date | — |
| Expiry date | Jan 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.