Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layer
US6355516B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2000 |
| Grant date | Mar 12, 2002 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta2O5 film by performing an in-situ plasma process using the mixture gas of nitrogen and oxygen during the process of forming the Ta2O5 film as the dielectric film of the capacitor. Thus, it can reduce the impurity of the Ta2O5 film to increase the supply of oxygen, and thus can improve the dielectric and leak current characteristic of the Ta2O5 film. Further, it can prohibit oxidization of the underlying electrode, thus reducing the thickness of the equivalent oxide film of the capacitor as possible and sufficiently securing the capacitance of the capacitor. The method according to the present invention includes forming a polysilicon film on a semiconductor substrate in which a given underlying structure is formed; sequentially forming a first buffer layer and a metal layer on the polysilicon film to form a lower electrode; forming a Ta2O5 film on the metal layer, wherein the process of depositing the Ta2O5 film is performed by a plasma process under the mixture gas atmosphere of nitrogen and oxygen; and forming a second buffer layer and an u…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.