Semiconductor manufacturing methods, plasma processing methods and plasma processing apparatuses
US6355570B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1999 |
| Grant date | Mar 12, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9501
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a semiconductor manufacturing method, a plasma processing method and a plasma processing apparatus for generating a plasma in a processing chamber and carrying out processing on material to be processed by using the plasma, comprising a floating-foreign-particle measuring apparatus including: a light radiating optical system for radiating a light having a desired wavelength and completing intensity modulation at a desired frequency to the processing chamber; a scattered-light detecting optical system for separating a component with the desired wavelength from scattered lights obtained from the processing chamber as a result of radiation of the light by the light radiating optical system, for optically receiving the component and for converting the component into a first signal; and a foreign-particle-signal extracting unit which separates a second signal representing foreign particle floating in the plasma or in an area in proximity to the plasma from a third signal obtained by emission of the plasma for detection of the second signal by extraction of a component with the desired frequency used for the intensity modulation from the first signal obtain…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.