Plasma film forming method and plasma film forming apparatus
US6355902B2 · kind B2 · utility
6Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2001 |
| Grant date | Mar 12, 2002 |
| Priority date | — |
| Expiry date | Jan 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.