Patent · US Expired

Semiconductor laser device and method of manufacture

US6356571B1 · kind B1 · utility

4Cited by

6References

6Claims

0Family size

Assignee

Motorola, Inc. · US

Inventors

Philip Kiely · Gilbert, US
Paul Claisse · Gilbert, US
Jamal Ramdani · Gilbert, US

Key dates

Filing date	Aug 17, 2000
Grant date	Mar 12, 2002
Priority date	—
Expiry date	Aug 17, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/18369
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A Vertical Cavity Surface Emitting Laser (VCSEL) (10) and a method for manufacturing the VCSEL (10). The VCSEL (10) includes a ridge structure (34), a first confinement layer (36) disposed adjacent to a portion of the ridge structure (34), and a second confinement layer (37) disposed on the first confinement layer (36) and disposed adjacent to a portion of the ridge structure (32). Carriers injected into the ridge structure (34) are confined by the first confinement layer (36).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.