Dielectric films from organohydridosiloxane resins with low organic content
US6358559B1 · kind B1 · utility
10Cited by
74References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and up to 40 mole percent of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 3 or lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.