TFEL devices having insulating layers
US6358632B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1998 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Nov 10, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film electroluminescent device has a bottom substrate and a first electrode layer deposited on the bottom substrate. The first insulating layer is deposited on the first electrode layer. A phosphor layer is deposited on the first insulating layer. A second insulating layer is deposited on the phosphor layer. A second electrode layer is deposited on the second insulating layer. In one aspect of the invention, at least a portion of the first insulating layer includes a layer of aluminum titanium oxide, and at least a portion of the second insulating layer includes a layer of a fusing dielectric material. In another aspect of the invention, the first insulating layer includes a layer of a refractory metal oxide, and the second insulating layer includes a layer of a fusing dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.